ebl-process-controller

电子束光刻技术，用于高分辨率纳米图案制作，包括剂量优化和邻近效应校正

EBL Process Controller

Purpose

The EBL Process Controller skill provides comprehensive electron beam lithography process control, enabling high-resolution nanopatterning through dose optimization, proximity effect correction, and critical dimension control.

Capabilities

Pattern design and fracturing
Dose optimization and modulation
Proximity effect correction (PEC)
Alignment and overlay control
Resist processing optimization
Critical dimension (CD) control

Usage Guidelines

EBL Process Control

Pattern Preparation
- Design in CAD software
- Fracture into write fields
- Apply beam step size
Dose Optimization
- Run dose matrices
- Apply PEC algorithms
- Account for pattern density
Process Integration
- Optimize resist thickness
- Control development conditions
- Verify feature dimensions

Process Integration

Nanolithography Process Development
Nanodevice Integration Process Flow

Input Schema

{
  "pattern_file": "string",
  "resist": "string",
  "thickness": "number (nm)",
  "target_cd": "number (nm)",
  "beam_voltage": "number (kV)",
  "beam_current": "number (pA)"
}

Output Schema

{
  "optimized_dose": "number (uC/cm2)",
  "pec_parameters": {
    "alpha": "number",
    "beta": "number",
    "eta": "number"
  },
  "write_time": "number (hours)",
  "expected_cd": "number (nm)",
  "cd_uniformity": "number (3sigma)"
}